取消
|
SSM6L56FE,LM | Toshiba | - |
37756
|
MOSFET Small-signal MOSFET 2 in 1 Nch + Pch Vdss: 20V Id: 800mA Pd: 0.15W | 2.9267 | ||
|
NTHL045N065SC1 | onsemi | - |
2497
|
MOSFET SIC MOS TO247-3L 650V | 115.6894 | ||
|
BSC030N03LSGATMA1 | Infineon Technologies | - |
5504
|
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | 7.1642 | ||
|
IXYN110N120B4H1 | Littelfuse | - |
900
|
IGBT 模块 IXYN110N120B4H1 | 375.1487 | ||
|
|
BSC0901NSATMA1 | Infineon Technologies | - |
7967
|
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | 10.17 | ||
|
RD3P03BBHTL1 | ROHM Semiconductor | - |
5544
|
MOSFET MOSFET | 13.7521 | ||
|
SI3459BDV-T1-BE3 | Vishay / Siliconix | - |
126446
|
MOSFET P-CHANNEL 60-V (D-S) | 6.5088 | ||
|
SQJQ150E-T1_GE3 | Vishay Semiconductors | - |
4780
|
MOSFET N-CHANNEL 40-V (D-S) 175C AEC-Q101 | 17.4133 | ||
|
VS-GT100TS065N | Vishay Semiconductors | - |
839
|
IGBT 模块 Modules IGBT - IAP IGBT | 585.5434 | ||
|
R6049YNZ4C13 | ROHM Semiconductor | - |
1990
|
MOSFET Nch 600V 49A, TO-247G, Power MOSFET: R6049YNZ4 is a power MOSFET with low on - resistance, suitable for switching. | 51.1777 | ||
|
SQA446CEJW-T1_GE3 | Vishay Semiconductors | - |
57668
|
MOSFET N-CHANNEL 20-V (D-S) 175C AEC-Q101 | 4.8816 | ||
|
IMZA120R040M1HXKSA1 | Infineon Technologies | - |
1255
|
MOSFET | 148.9679 | ||
|
IPP65R110CFD7XKSA1 | Infineon Technologies | - |
6463
|
MOSFET HIGH POWER_NEW | 40.68 | ||
|
RX3G18BBGC16 | ROHM Semiconductor | - |
2664
|
MOSFET Nch 40V 270A, TO-220AB, Power MOSFET: RX3G18BBG is a power MOSFET with low on-resistance and High power package, suitable for switching. | 59.7996 | ||
|
NTPF165N65S3H | onsemi | - |
13095
|
MOSFET SUPERFET3 FAST, 165MOHM, TO-220F | 39.6178 | ||
|
IPF024N10NF2SATMA1 | Infineon Technologies | - |
1596
|
MOSFET | 36.9397 | ||
|
|
RX3R05BBHC16 | ROHM Semiconductor | - |
2789
|
MOSFET Nch 150V 50A, TO-220AB, Power MOSFET: RX3R05BBH is a power MOSFET with low on-resistance and high power small mold package, suitable for switching. | 31.1654 | ||
|
NTMT190N65S3HF | onsemi | - |
1783
|
MOSFET SF3 FRFET 650V 190MOHM, PQFN88 | 51.5845 | ||
|
SCT3060ARC15 | ROHM Semiconductor | - |
1660
|
MOSFET | 115.4521 | ||
|
TK60S10N1L,LXHQ | Toshiba | - |
8788
|
MOSFET PD=180W F=1MHZ AEC-Q101 | 12.2831 | ||
|
IMBG65R048M1HXTMA1 | Infineon Technologies | - |
2800
|
MOSFET SILICON CARBIDE MOSFET | 94.7053 | ||
|
IKFW75N65EH5XKSA1 | Infineon Technologies | - |
1526
|
IGBT 晶体管 INDUSTRY 14 | 63.1331 | ||
|
SIHA22N60EL-GE3 | Vishay / Siliconix | - |
1794
|
MOSFET N-CHANNEL600V | 32.7022 | ||
|
BSZ100N06LS3GATMA1 | Infineon Technologies | - |
41817
|
MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | 9.0287 | ||
|
IXYH55N120A4 | IXYS | - |
2407
|
IGBT 晶体管 IGBT XPT GEN 4 1200V TO247 | 103.734 |
