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MMUN2114LT1G

  • MMUN2114LT1G
  • MMUN2114LT1G
MMUN2114LT1G
Transistors - Bipolar (BJT) - Single, Pre-Biased
onsemi
TRANS PREBIAS P
-
Tape & Reel (TR) Cut Tape (CT)
29836
-
MMUN2114LT3
乐山无线电-LRC
MMUN2114LT3
乐山无线电-LRC
SEM
TYPEDESCRIPTION
Mfronsemi
Series-
PackageTape & Reel (TR)
Product StatusActive
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Power - Max246 mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)
Base Product NumberMMUN2114
: 29836

1

0.13

0.13

10

0.115

1.15

100

0.0628

6.28

500

0.03866

19.33

1000

0.02636

26.36

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