inductive loads; Thermal shutdown with restart; ESD- Protection; Loss GND and loss Vbb protection; Very low stand by current; Reverse battery protection
capability e.g. VCC = 1.2 V and 1.8 V; 1.5 kV HBM ESD hardness; High maximum RF input power; Low power consumption, ideal for mobile applications; Available
during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO263-3, RoHS
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO263-3, RoHS
: 2A @ 15V; 1200V Coreless Transformer IC with galvanic isolation; 300ns prop del. with 240ns ft; High CMTI robustness >100kV/s; Separate source/sink
