TYPE | DESCRIPTION |
Number of channels | 2 |
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) | 40 |
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) | 4.5 |
Rail-to-rail | In to V+ |
GBW (typ) (MHz) | 5.25 |
Slew rate (typ) (V/µs) | 20 |
Vos (offset voltage at 25°C) (max) (mV) | 4 |
Iq per channel (typ) (mA) | 0.9375 |
Vn at 1 kHz (typ) (nV√Hz) | 37 |
Rating | Catalog |
Operating temperature range (°C) | -40 to 125 |
Offset drift (typ) (µV/°C) | 2 |
Features | Cost Optimized, EMI Hardened, Standard Amps |
Input bias current (max) (pA) | 120 |
CMRR (typ) (dB) | 105 |
Iout (typ) (A) | 0.026 |
Architecture | CMOS |
Input common mode headroom (to negative supply) (typ) (V) | 1.5 |
Input common mode headroom (to positive supply) (typ) (V) | 0 |
Output swing headroom (to negative supply) (typ) (V) | 0.105 |
Output swing headroom (to positive supply) (typ) (V) | 0.115 |
Number of channels | 2 |
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) | 40 |
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) | 4.5 |
Rail-to-rail | In to V+ |
GBW (typ) (MHz) | 5.25 |
Slew rate (typ) (V/µs) | 20 |
Vos (offset voltage at 25°C) (max) (mV) | 4 |
Iq per channel (typ) (mA) | 0.9375 |
Vn at 1 kHz (typ) (nV√Hz) | 37 |
Rating | Catalog |
Operating temperature range (°C) | -40 to 125 |
Offset drift (typ) (µV/°C) | 2 |
Features | Cost Optimized, EMI Hardened, Standard Amps |
Input bias current (max) (pA) | 120 |
CMRR (typ) (dB) | 105 |
Iout (typ) (A) | 0.026 |
Architecture | CMOS |
Input common mode headroom (to negative supply) (typ) (V) | 1.5 |
Input common mode headroom (to positive supply) (typ) (V) | 0 |
Output swing headroom (to negative supply) (typ) (V) | 0.105 |
Output swing headroom (to positive supply) (typ) (V) | 0.115 |