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2N5210TAR

  • 2N5210TAR
  • 2N5210TAR
2N5210TAR
Single BJT Transistors
ON Semiconductor
-
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
16803
YES
TYPEDESCRIPTION
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 2N5210
Power - Max 625mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100μA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 30MHz

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