GAN POWER DEVICES AND APPLICATIONS 1ST ED Livres, médias

Numéro de pièces：	GAN POWER DEVICES AND APPLICATIONS 1ST ED
Classification des produits：	Livres, médias
Fabricants：	EPC
Décrire：	TEXT GAN POWER DEVICES & APPS
encapsulé：
Emballage：	Boîte
quantité：	10
État de RoHS：	YES
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TAPER	DESCRIPTION
Fabricant	EPC
Série	-
Emballer	Boîte
État du produit	ACTIVE
Taper	Book
Titre	GaN Power Devices and Applications
Auteurs)	Alex Lidow
Éditeur	J.Wiley

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SiC/GaN-氮化镓GaN

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安世-Nexperia

650 V、50 mΩ氮化镓(GaN) FET，采用TO-247封装

GAN190-650EBE

安世-Nexperia

650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

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650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

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安世-Nexperia

650 V、33 mΩ氮化镓(GaN) FET，采用CCPAK1212i封装

GAN7R0-150LBE

安世-Nexperia

150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package

GAN190-650FBE

安世-Nexperia

650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

GAN140-650EBE

安世-Nexperia

650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN140-650FBE

安世-Nexperia

650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

GAN039-650NTB

安世-Nexperia

650 V、33 mΩ氮化镓(GaN) FET，采用CCPAK1212i封装

GAN039-650NBBA

安世-Nexperia

650 V、33 mΩ氮化镓(GaN) FET，采用CCPAK1212封装

GAN041-650WSB

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650 V、35 mΩ氮化镓(GaN) FET，采用TO-247封装

GAN039-650NBB

安世-Nexperia

650 V、33 mΩ氮化镓(GaN) FET，采用CCPAK1212封装

GAN3R2-100CBE

安世-Nexperia

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GAN65R150

银河微-Galaxy

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gANZ0017

Gotmic

Amplifiers

gANZ0032

Gotmic

Amplifiers

gANZ0012

Gotmic

Amplifiers

gANZ0033

Gotmic

Amplifiers

gANZ0031

Gotmic

Amplifiers

GAN-2A-12DG2

高登-Golden

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高登-Golden

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BM10N65GAN

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BM10N60GAN

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意法-ST

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MASTERGAN5

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MASTERGAN1L

意法-ST

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意法-ST

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意法-ST

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瑞萨-Renesas

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瑞萨-Renesas

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High Power Amplifier, 20 - 500 MHz, 50Ω