86-13826519287‬
取消

T201DC100

Numéro de pièces T201DC100
Classification des produits Moniteurs de transducteurs de courant/tension
Fabricants Seneca
Décrire Loop Power DC Current Transducer
encapsulé
Emballage En gros
quantité 2
État de RoHS YES
partage
Les stocks:
Le nombre total

quantité

prix

Le prix total

1

$240.4500

$240.4500

Obtenir des informations sur les offres
Produits Paramètres
PDF(1)
TAPERDESCRIPTION
FabricantSeneca
SérieT201
EmballerEn gros
État du produitACTIVE
Type de montageDIN Rail
Sortir4 ~ 20mA
TaperDC Current Transducer
Précision±0.2%
Température de fonctionnement-10°C ~ 60°C
Style de terminaisonSpring Terminal
Tension - Alimentation6 ~ 100V
Temps de réponse100ms
Agence d'approbationCE, UL
Plage d'entrée0 ~ 100VAC (Configurable)
Isolement3000VAC
Modèles similaires
T201N70TOH PR
英飞凌-Infineon
可控硅/二极管Discs
T201N
英飞凌-Infineon
Phase Control Thyristor
T201N65TOH
英飞凌-Infineon
SCR模块 PHASE CONTROL THYRISTOR
T201N70TOH
英飞凌-Infineon
SCR PCT 7000V 245A
T201213-10-B
ITG
1:2.5:2.5 Turns Ratio, 0.356uH Primary Inductance, 25%, 200mOhm DCR Max. 200Vdc Rated. DIP Transform
T201213-15H-B
ITG
1:2.5:2.5 Turns Ratio, 1.42uH Primary Inductance, 25%, 2500mOhm DCR Max. 4500Vdc Rated. DIP Transformer
T201213-13-A
ITG
1:2.5:2.5 Turns Ratio, 1.42uH Primary Inductance, 25%, 2500mOhm DCR Max. 200Vdc Rated. DIP Transformer
T2010H-1000B
韦达-WEIDA
高结温双向可控硅
T201213-10H-B
ITG
1:2.5:2.5 Turns Ratio, 0.039uH Primary Inductance, 25%, 40mOhm DCR Max. 4500Vdc Rated. DIP Transformer
T201213-10H-A
ITG
1:2.5:2.5 Turns Ratio, 0.039uH Primary Inductance, 25%, 40mOhm DCR Max. 4500Vdc Rated. DIP Transformer
T201213-4-A
ITG
1:1:1 Turns Ratio, 2.22uH Primary Inductance, 25%, 200mOhm DCR Max. 200Vdc Rated. DIP Transformer
T2010H-1000A
韦达-WEIDA
高结温双向可控硅
T201213-11-A
ITG
1:2.5:2.5 Turns Ratio, 0.634uH Primary Inductance, 25%, 450mOhm DCR Max. 200Vdc Rated. DIP Transformer
T201213-5-B
ITG
1:1:1 Turns Ratio, 3.96uH Primary Inductance, 25%, 500mOhm DCR Max. 200Vdc Rated. DIP Transformer
T201213-13-B
ITG
1:2.5:2.5 Turns Ratio, 1.42uH Primary Inductance, 25%, 2500mOhm DCR Max. 200Vdc Rated. DIP Transformer
T201213-7-B
ITG
1:1:1 Turns Ratio, 8.91uH Primary Inductance, 25%, 2700mOhm DCR Max. 200Vdc Rated. DIP Transformer
T201213-1-B
ITG
1:1:1 Turns Ratio, 2.7uH Primary Inductance, 25%, 300mOhm DCR Max. 200Vdc Rated. DIP Transformer
T201213-4-B
ITG
1:1:1 Turns Ratio, 2.22uH Primary Inductance, 25%, 200mOhm DCR Max. 200Vdc Rated. DIP Transformer
T2010H-800F
韦达-WEIDA
高结温双向可控硅
T201213-1H-B
ITG
1:1:1 Turns Ratio, 2.7uH Primary Inductance, 25%, 300mOhm DCR Max. 4500Vdc Rated. DIP Transformer
T2010H-800E
韦达-WEIDA
高结温双向可控硅
T201213-5-A
ITG
1:1:1 Turns Ratio, 3.96uH Primary Inductance, 25%, 500mOhm DCR Max. 200Vdc Rated. DIP Transformer
T2010H-1000E
韦达-WEIDA
高结温双向可控硅
T201213-8H-A
ITG
1:1:1 Turns Ratio, 6.18uH Primary Inductance, 25%, 1000mOhm DCR Max. 4500Vdc Rated. DIP Transformer
T201213-5H-A
ITG
1:1:1 Turns Ratio, 0.99uH Primary Inductance, 25%, 70mOhm DCR Max. 4500Vdc Rated. DIP Transformer
T201213-2-A
ITG
1:1:1 Turns Ratio, 0.247uH Primary Inductance, 25%, 40mOhm DCR Max. 200Vdc Rated. DIP Transformer
T201213-9H-A
ITG
1:1:1 Turns Ratio, 8.91uH Primary Inductance, 25%, 2700mOhm DCR Max. 4500Vdc Rated. DIP Transformer
T201213-2H-A
ITG
1:1:1 Turns Ratio, 0.247uH Primary Inductance, 25%, 40mOhm DCR Max. 4500Vdc Rated. DIP Transformer
T2010H-800B
韦达-WEIDA
高结温双向可控硅
T201213-1-A
ITG
1:1:1 Turns Ratio, 2.7uH Primary Inductance, 25%, 300mOhm DCR Max. 200Vdc Rated. DIP Transformer
T201213-14H-A
ITG
1:2.5:2.5 Turns Ratio, 0.99uH Primary Inductance, 25%, 900mOhm DCR Max. 4500Vdc Rated. DIP Transformer
T201213-1H-A
ITG
1:1:1 Turns Ratio, 2.7uH Primary Inductance, 25%, 300mOhm DCR Max. 4500Vdc Rated. DIP Transformer
T201213-3H-B
ITG
1:1:1 Turns Ratio, 0.45uH Primary Inductance, 25%, 100mOhm DCR Max. 4500Vdc Rated. DIP Transformer
T201213-12-A
ITG
1:2.5:2.5 Turns Ratio, 0.99uH Primary Inductance, 25%, 900mOhm DCR Max. 200Vdc Rated. DIP Transformer
T201213-3-B
ITG
1:1:1 Turns Ratio, 0.99uH Primary Inductance, 25%, 70mOhm DCR Max. 200Vdc Rated. DIP Transformer
T201213-3-A
ITG
1:1:1 Turns Ratio, 0.99uH Primary Inductance, 25%, 70mOhm DCR Max. 200Vdc Rated. DIP Transformer
T201213-13H-A
ITG
1:2.5:2.5 Turns Ratio, 0.634uH Primary Inductance, 25%, 450mOhm DCR Max. 4500Vdc Rated. DIP Transformer
T201213-6H-A
ITG
1:1:1 Turns Ratio, 2.22uH Primary Inductance, 25%, 200mOhm DCR Max. 4500Vdc Rated. DIP Transformer
T201213-9-A
ITG
1:2.5:2.5 Turns Ratio, 0.158uH Primary Inductance, 25%, 70mOhm DCR Max. 200Vdc Rated. DIP Transformer
T201213-4H-B
ITG
1:1:1 Turns Ratio, 0.686uH Primary Inductance, 25%, 780mOhm DCR Max. 4500Vdc Rated. DIP Transformer
T201213-5H-B
ITG
1:1:1 Turns Ratio, 0.99uH Primary Inductance, 25%, 70mOhm DCR Max. 4500Vdc Rated. DIP Transformer
T201213-15H-A
ITG
1:2.5:2.5 Turns Ratio, 1.42uH Primary Inductance, 25%, 2500mOhm DCR Max. 4500Vdc Rated. DIP Transformer
T201213-6-B
ITG
1:1:1 Turns Ratio, 6.18uH Primary Inductance, 25%, 1000mOhm DCR Max. 200Vdc Rated. DIP Transformer
T201213-8-B
ITG
1:2.5:2.5 Turns Ratio, 0.039uH Primary Inductance, 25%, 40mOhm DCR Max. 200Vdc Rated. DIP Transformer
T201213-9-B
ITG
1:2.5:2.5 Turns Ratio, 0.158uH Primary Inductance, 25%, 70mOhm DCR Max. 200Vdc Rated. DIP Transformer
T201213-7H-B
ITG
1:1:1 Turns Ratio, 3.96uH Primary Inductance, 25%, 500mOhm DCR Max. 4500Vdc Rated. DIP Transformer
T201213-4H-A
ITG
1:1:1 Turns Ratio, 0.686uH Primary Inductance, 25%, 780mOhm DCR Max. 4500Vdc Rated. DIP Transformer
T201213-14H-B
ITG
1:2.5:2.5 Turns Ratio, 0.99uH Primary Inductance, 25%, 900mOhm DCR Max. 4500Vdc Rated. DIP Transformer
T201213-7-A
ITG
1:1:1 Turns Ratio, 8.91uH Primary Inductance, 25%, 2700mOhm DCR Max. 200Vdc Rated. DIP Transformer
T201213-2-B
ITG
1:1:1 Turns Ratio, 0.247uH Primary Inductance, 25%, 40mOhm DCR Max. 200Vdc Rated. DIP Transformer

Roving Networks (Microchip Technology)
MEMS OSC XO 133.0000MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 24.5760MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 100.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSC XO 125.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSCILLATOR, ULTRA LOW POWER
Roving Networks (Microchip Technology)
MEMS OSC XO 133.3330MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 175.0000MHZ LVDS SMD
Roving Networks (Microchip Technology)
MEMS OSC LOW JITTER 125MHZ LVDS
关闭
Inquiry
captcha

86-13826519287‬
0