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SCCS30B106PRB

  • SCCS30B106PRB
  • SCCS30B106PRB
SCCS30B106PRB
超级电容/超级电容器
KYOCERA AVX
-
2584
YES
TYPEDESCRIPTION
系列SCC
产品Electric Double Layer Capacitors
端接类型Radial
电容10 F
电压额定值 DC2.7 VDC
容差0 %, + 100 %
ESR25 mOhms
最小工作温度- 40 C
最大工作温度+ 65 C
方向Vertical
长度30 mm
宽度
高度
直径10 mm
寿命1000 Hour
资格
封装Bulk

saddfasff

: 2584

1

21.6395

21.6395

10

17.2438

172.438

50

16.272

813.6

100

14.238

1423.8

500

12.3622

6181.1

720

12.2831

8843.832

2

10.735

21.47

Maxim Integrated
Interface - Telecom 128-LQFP Line Interface Unit (LIU) 3.135V~3.465V -40°C~85°C 3.3V DS21448 PCM TRANSCEIVER 320mA 0.5mm IC LIU QUAD E1/T1/J1 128-LQFP
KYOCERA AVX
超级电容/超级电容器 2.7V 10F 10x30mm Radial Low ESR
Monolithic Power Systems (MPS)
电源管理IC开发工具 80V, 0.8A, Synchronous Buck ConverterEvaluation Board
Advanced Energy
COOLX POWER SUPPLY
onsemi
TRANS PREBIAS NPN 50V SC70-3
On Shore Technology Inc.
CONN TERM BLK END PLATE RAIL BG
Infineon
Eval Board, 32Bit, Aurix Tricore Rohs Compliant: Yes
Infineon
temperature protection; Over current protection | Benefits: High efficiency; High output current accuracy 3%; Up to 3000:1 contrast ratio | Target
Infineon
MCU 32-Bit XMC1000 ARM Cortex M0 RISC 32KB Flash 3.3V/5V 16-Pin TSSOP T/R/SAMPLE
Infineon
CPU. | Summary of Features: Package: PG-LQFP-144; CAN Nodes: 6; Program Memory: 1,088.0 KByte; FlexRay: 2; Type of Serial I/O Interfaces: 10 x SPI, LIN, UART, IIC, IIS | Target Applications: High-end BCM; Gateway
Infineon
described. The BGA725L6 is based upon Infineon Technologies B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. | Summary of
Infineon
Voltage Max:38V; Driver Case Style:TO-220; No. of Pins:7; Input Delay:300µs; Output Delay:300µs; Operating Temperature Min:-40°C; Operating Temperature
Infineon
terminal; Low noise figure NFSSB: 12 dB; High conversion gain: 26 dB; High 1 dB input compression point: -12 dBm; Single supply voltage 3.3 V; Low powe
Infineon
communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass); and C-band LNB (1st and 2nd stage LNA); Ku-band LNB front-end (2nd stage or 3rd stage LNA and active mixer); Ka-band oscillators (DROs)
Infineon
) Outstanding Gms = 20 dB Noise Figure F = 0.9 dB; SIEGET 45 - Line; Pb-free (ROHS compliant) package; Qualification report according to AEC-Q101
Infineon
LDMOS FET, High Power RF, 70W, 1.805-1.880GHz, H-37265-2 Pkg, T/R 250
Infineon
LDMOS FET, High Power RF, 150W, 920-960MHz, H-33288-6 Pkg, T/R 50
Infineon
LDMOS FET, High Power RF, 180W, 2.11-2.17GHz, H-34288-4/2 Pkg, T/R 50
Infineon
LDMOS FET, High Power RF, 200W, 2.11-2.17GHz, H-36260-2 Pkg, T/R 50
Omron Automation and Safety
编码器 5M EXT.CABLE
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