86-13826519287
1968195384@qq.com
中文
EN
日本語
Русский
français
اللغة العربية
Products
Manufacturer
Place Order
Information
local
About Us
Corporate culture
Company introduction
Contact Us
Contact us
取消
Home
Products
Manufacturer
Place Order
Information
About Us
Contact Us
中文
EN
日本語
Русский
français
اللغة العربية
Home
Product
/
Maker/DIY, Educational
/
Books, Media
/
GAN POWER DEVICES AND APPLICATIONS 1ST ED
GAN POWER DEVICES AND APPLICATIONS 1ST ED
Part number
:
GAN POWER DEVICES AND APPLICATIONS 1ST ED
Product classification
:
Books, Media
Manufacturer
:
EPC
Description
:
TEXT GAN POWER DEVICES & APPS
Encapsulation
:
Packing
:
Box
Quantity
:
10
RoHS status
:
YES
Share
Inventory
:
Total number
Quantity
Price
Total price
1
$113.4000
$113.4000
Obtain quotation information
Product parameters
PDF(1)
TYPE
DESCRIPTION
Mfr
EPC
Series
-
Package
Box
Product Status
ACTIVE
Type
Book
Title
GaN Power Devices and Applications
Author(s)
Alex Lidow
Publisher
J.Wiley
Similar models
GAN HEMT
NULL
射频器件-射频晶体管-GAN HEMT
氮化镓GaN
NULL
SiC/GaN-氮化镓GaN
GAN063-650WSA
安世-Nexperia
650 V、50 mΩ氮化镓(GaN) FET,采用TO-247封装
GAN190-650EBE
安世-Nexperia
650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN080-650EBE
安世-Nexperia
650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN039-650NTBA
安世-Nexperia
650 V、33 mΩ氮化镓(GaN) FET,采用CCPAK1212i封装
GAN7R0-150LBE
安世-Nexperia
150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package
GAN190-650FBE
安世-Nexperia
650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
GAN140-650EBE
安世-Nexperia
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140-650FBE
安世-Nexperia
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
GAN039-650NTB
安世-Nexperia
650 V、33 mΩ氮化镓(GaN) FET,采用CCPAK1212i封装
GAN039-650NBBA
安世-Nexperia
650 V、33 mΩ氮化镓(GaN) FET,采用CCPAK1212封装
GAN041-650WSB
安世-Nexperia
650 V、35 mΩ氮化镓(GaN) FET,采用TO-247封装
GAN039-650NBB
安世-Nexperia
650 V、33 mΩ氮化镓(GaN) FET,采用CCPAK1212封装
GAN3R2-100CBE
安世-Nexperia
100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP)
GAN65R150
银河微-Galaxy
10A, 650V, N Channel, Small Signal MOSFETs
gANZ0017
Gotmic
Amplifiers
gANZ0032
Gotmic
Amplifiers
gANZ0012
Gotmic
Amplifiers
gANZ0033
Gotmic
Amplifiers
gANZ0031
Gotmic
Amplifiers
GAN-2A-12DG2
高登-Golden
功率继电器
GAN-H
高登-Golden
功率继电器
BM12N60GAN
明月-MingYue
MOS芯片
BM10N65GAN
明月-MingYue
MOS芯片
BM12N65GAN
明月-MingYue
MOS芯片
BM10N60GAN
明月-MingYue
MOS芯片
ZHL-100W-GAN
Mini-Circuits
Coaxial High Power Amplifier
R5F11AGGANB
瑞萨-Renesas
Bluetooth® Low Energy Microcontrollers for Smart Connectivity
MASTERGAN2
意法-ST
High power density 600V Half bridge driver with two enhancement mode GaN HEMT
R5F104EGANA
瑞萨-Renesas
Low Power, High Function, General Purpose Microcontrollers for Motor Control, Industrial and Metering Applications
MASTERGAN1
意法-ST
High power density half-bridge high voltage driver with two 650V enhancement mode GaN HEMT
R5F101BGANA
瑞萨-Renesas
Low Power, High Function Microcontrollers for General Purpose Applications
R5F104BGANA
瑞萨-Renesas
Low Power, High Function, General Purpose Microcontrollers for Motor Control, Industrial and Metering Applications
MASTERGAN3
意法-ST
High power density 600 V Half bridge driver with two enhancement mode GaN HEMTs
MASTERGAN5
意法-ST
High power density 600 V half-bridge driver with two enhancement mode GaN power HEMTs
MASTERGAN1L
意法-ST
600 V half-bridge enhancement mode GaN HEMT with high voltage driver
VIPERGAN100
意法-ST
采用增强模式GaN HEMT的高级准谐振离线高压变换器
MASTERGAN4L
意法-ST
600 V half-bridge enhancement mode GaN HEMT with high voltage driver
R5F104GGANA
瑞萨-Renesas
Low Power, High Function, General Purpose Microcontrollers for Motor Control, Industrial and Metering Applications
MASTERGAN4
意法-ST
High power density 600V half bridge driver with two enhancement mode GaN power HEMT
R5F100EGANA
瑞萨-Renesas
Low Power, High Function Microcontrollers for General Purpose Applications
VIPERGAN65
意法-ST
采用增强模式GaN HEMT的高级准谐振离线高压变换器
VIPERGAN50
意法-ST
嵌入高压转换器的高级准谐振控制器和650V GAN HEMT
R5F100BGANA
瑞萨-Renesas
Low Power, High Function Microcontrollers for General Purpose Applications
R5F101EGANA
瑞萨-Renesas
Low Power, High Function Microcontrollers for General Purpose Applications
R5F100GGANA
瑞萨-Renesas
Low Power, High Function Microcontrollers for General Purpose Applications
R5F101GGANA
瑞萨-Renesas
Low Power, High Function Microcontrollers for General Purpose Applications
ZHL-50W-GAN+
Mini-Circuits
High Power Amplifier, 20 - 500 MHz, 50Ω
ZHL-100W-GAN+
Mini-Circuits
High Power Amplifier, 20 - 500 MHz, 50Ω
Roving Networks (Microchip Technology)
DSC1001DI1-133.0000T
MEMS OSC XO 133.0000MHZ CMOS SMD
Learn more
Roving Networks (Microchip Technology)
DSC1001BL5-024.5760T
MEMS OSC XO 24.5760MHZ CMOS SMD
Learn more
Roving Networks (Microchip Technology)
DSC1122BI1-100.0000T
MEMS OSC XO 100.0000MHZ LVPECL
Learn more
Roving Networks (Microchip Technology)
DSC1122AI1-125.0000T
MEMS OSC XO 125.0000MHZ LVPECL
Learn more
Roving Networks (Microchip Technology)
DSC6001JE1B-052.0000T
MEMS OSCILLATOR, ULTRA LOW POWER
Learn more
Roving Networks (Microchip Technology)
DSC1001BI5-133.3330T
MEMS OSC XO 133.3330MHZ CMOS SMD
Learn more
Roving Networks (Microchip Technology)
DSC1123CI2-175.0000T
MEMS OSC XO 175.0000MHZ LVDS SMD
Learn more
Roving Networks (Microchip Technology)
DSC1123DI1-125.0000T
MEMS OSC LOW JITTER 125MHZ LVDS
Learn more
关闭
Inquiry
Purchase quantity
:
Target price
:
Contact Name
:
Company Name
*
Mailbox
:
*
Mobile phone
Verification code
Submit
86-13826519287
1968195384@qq.com
https://www.facebook.com/tristazhong520?mibextid=LQQJ4
asfdasdf
https://www.instagram.com/tristazhong520?igsh=MWJ3Mmplbnc0bTdlZw%3D%3D&utm_source=qr
86-13826519287
86-13826519287
lang_service_time
lang_select_kefu
ininin
lang_service_time
lang_select_kefu
zalo
0