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NXH003P120M3F2PTNG

Part number NXH003P120M3F2PTNG
Product classification FET, MOSFET Arrays
Manufacturer Sanyo Semiconductor/onsemi
Description SILICON CARBIDE (SIC) MODULE EL
Encapsulation
Packing Tray
Quantity 20
RoHS status YES
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Total number

Quantity

Price

Total price

1

$271.6560

$271.6560

20

$254.4360

$5,088.7200

40

$244.8705

$9,794.8200

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Product parameters
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TYPEDESCRIPTION
MfrSanyo Semiconductor/onsemi
Series-
PackageTray
Product StatusACTIVE
Package / CaseModule
Mounting TypeChassis Mount
Configuration2 N-Channel (Half Bridge)
Operating Temperature-40°C ~ 150°C (TJ)
TechnologySilicon Carbide (SiC)
Power - Max1.48kW (Tj)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C435A (Tj)
Input Capacitance (Ciss) (Max) @ Vds20889pF @ 800V
Rds On (Max) @ Id, Vgs5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs1200nC @ 20V
Vgs(th) (Max) @ Id4.4V @ 160mA
Supplier Device Package36-PIM (56.7x62.8)

Roving Networks (Microchip Technology)
MEMS OSC XO 133.0000MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 24.5760MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 100.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSC XO 125.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSCILLATOR, ULTRA LOW POWER
Roving Networks (Microchip Technology)
MEMS OSC XO 133.3330MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 175.0000MHZ LVDS SMD
Roving Networks (Microchip Technology)
MEMS OSC LOW JITTER 125MHZ LVDS
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