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TP44110HB

Part number TP44110HB
Product classification FET, MOSFET Arrays
Manufacturer Tagore Technology
Description GANFET 2N-CH 650V 30QFN
Encapsulation
Packing Tray
Quantity 60
RoHS status YES
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Quantity

Price

Total price

1

$7.2240

$7.2240

10

$7.2240

$72.2400

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Product parameters
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TYPEDESCRIPTION
MfrTagore Technology
Series-
PackageTray
Product StatusACTIVE
Package / Case30-PowerWFQFN
Mounting TypeSurface Mount
Configuration2 N-Channel (Half Bridge)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Input Capacitance (Ciss) (Max) @ Vds110pF @ 400V
Rds On (Max) @ Id, Vgs118mOhm @ 500mA, 6V
Gate Charge (Qg) (Max) @ Vgs3nC @ 6V
Vgs(th) (Max) @ Id2.5V @ 11mA
Supplier Device Package30-QFN (8x10)

Roving Networks (Microchip Technology)
MEMS OSC XO 133.0000MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 24.5760MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 100.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSC XO 125.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSCILLATOR, ULTRA LOW POWER
Roving Networks (Microchip Technology)
MEMS OSC XO 133.3330MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 175.0000MHZ LVDS SMD
Roving Networks (Microchip Technology)
MEMS OSC LOW JITTER 125MHZ LVDS
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