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A5G21H605W19NR3

零件编号 A5G21H605W19NR3
产品分类 RF FET、MOSFET
制造商 NXP Semiconductors
描述 RF MOSFET LDMOS 30V ACP1230S-4
封装
包装 卷带式 (TR)
数量 0
RoHS 状态 NO
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产品参数
PDF(1)
类型描述
制造商NXP Semiconductors
系列-
包装卷带式 (TR)
产品状态ACTIVE
包装/箱OM-780-4S4S
安装类型Surface Mount
频率2.11GHz ~ 2.2GHz
功率输出85W
获得15.1dB
技术GaN
供应商设备包OM-780-4S4S
额定电压125 V
电压 - 测试48 V
当前-测试300 mA
相似型号
A5G21H605W19N
恩智浦-NXP
2110-2200 MHz, 85 W Avg., 48 V Airfast® RF Power GaN Transistor

Roving Networks (Microchip Technology)
MEMS OSC XO 133.0000MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 24.5760MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 100.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSC XO 125.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSCILLATOR, ULTRA LOW POWER
Roving Networks (Microchip Technology)
MEMS OSC XO 133.3330MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 175.0000MHZ LVDS SMD
Roving Networks (Microchip Technology)
MEMS OSC LOW JITTER 125MHZ LVDS
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