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G04P10HE

零件编号 G04P10HE
产品分类 单 FET、MOSFET
制造商 Goford Semiconductor
描述 MOSFET P-CH ESD 100V 4A SOT-223
封装
包装 卷带式 (TR)
数量 20000
RoHS 状态 NO
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库存:
总数

数量

价格

总价

2500

$0.1470

$367.5000

15000

$0.1365

$2,047.5000

30000

$0.1260

$3,780.0000

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产品参数
PDF(1)
类型描述
制造商Goford Semiconductor
系列TrenchFET®
包装卷带式 (TR)
产品状态ACTIVE
包装/箱TO-261-4, TO-261AA
安装类型Surface Mount
工作温度-55°C ~ 150°C (TJ)
技术MOSFET (Metal Oxide)
场效应管类型P-Channel
电流 - 连续漏极 (Id) @ 25°C4A (Tc)
Rds On(最大)@Id、Vgs200mOhm @ 6A, 10V
功耗(最大)1.2W (Tc)
Vgs(th)(最大值)@Id2.8V @ 250µA
供应商设备包SOT-223
驱动电压(最大导通电阻、最小导通电阻)4.5V, 10V
Vgs(最大)±20V

Roving Networks (Microchip Technology)
MEMS OSC XO 133.0000MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 24.5760MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 100.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSC XO 125.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSCILLATOR, ULTRA LOW POWER
Roving Networks (Microchip Technology)
MEMS OSC XO 133.3330MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 175.0000MHZ LVDS SMD
Roving Networks (Microchip Technology)
MEMS OSC LOW JITTER 125MHZ LVDS
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