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SCT012H90G3AG

零件编号 SCT012H90G3AG
产品分类 单 FET、MOSFET
制造商 STMicroelectronics
描述 H2PAK-7
封装
包装 卷带式 (TR)
数量 0
RoHS 状态 YES
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库存:
总数

数量

价格

总价

1000

$31.5630

$31,563.0000

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产品参数
类型描述
制造商STMicroelectronics
系列-
包装卷带式 (TR)
产品状态ACTIVE
包装/箱TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
安装类型Surface Mount
工作温度-55°C ~ 175°C (TJ)
技术SiC (Silicon Carbide Junction Transistor)
场效应管类型N-Channel
电流 - 连续漏极 (Id) @ 25°C110A (Tc)
Rds On(最大)@Id、Vgs15.8mOhm @ 60A, 18V
功耗(最大)625W (Tc)
Vgs(th)(最大值)@Id4.2V @ 10mA
供应商设备包H2PAK-7
年级Automotive
驱动电压(最大导通电阻、最小导通电阻)15V, 18V
Vgs(最大)+18V, -5V
漏源电压 (Vdss)900 V
栅极电荷 (Qg)(最大值)@Vgs138 nC @ 18 V
输入电容 (Ciss)(最大值)@Vds3880 pF @ 600 V
资质AEC-Q101
替代型号
SCT012H90G3AG
意法-ST
Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
相似型号
SCT012H90G3AG
意法-ST
Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

Roving Networks (Microchip Technology)
MEMS OSC XO 133.0000MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 24.5760MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 100.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSC XO 125.0000MHZ LVPECL
Roving Networks (Microchip Technology)
MEMS OSCILLATOR, ULTRA LOW POWER
Roving Networks (Microchip Technology)
MEMS OSC XO 133.3330MHZ CMOS SMD
Roving Networks (Microchip Technology)
MEMS OSC XO 175.0000MHZ LVDS SMD
Roving Networks (Microchip Technology)
MEMS OSC LOW JITTER 125MHZ LVDS
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